ABB 5SHX2645L0004 3BHL000389P0104 Integrated Gate-Commutated Thyristor IGCT RC
ABB 5SHX2645L0004 3BHL000389P0104 Integrated Gate-Commutated Thyristor IGCT RC
Brand:
ABB DCSItem NO.:
5SHX2645L0004 3BHL000389P0104Order(MOQ):
1 PCPayment:
T/TMarket Price:
999Price Range:
1 - 5Product Origin:
Czech/SwitzerlandColor:
Depends on materialShipping Port:
XIAMENLead Time:
IN STOCKWeight:
2.6kgWarranty:
1 Year
ABB 5SHX2645L0004 3BHL000389P0104 Integrated Gate-Commutated Thyristor IGCT RC
Description:
5SHX2645L0004 with the ordering number 3BHL000389P0104 is designed as ABB Integrated Gate-Commutated Thyristor(IGCT ). The integrated gate commutated thyristor (IGCT) inherits the excellent characteristics of hard-driven GTO thyristors, most notably with significantly improved turn-off capability, and achieves key technological innovations in three dimensions: device body, gate drive, and practical applications. Leveraging its uniform switching characteristics, the IGCT's safe operating boundary can be extended to the dynamic avalanche limit, eliminating the need for a buffer absorption circuit. Thanks to improved loss performance, this device can meet the high-frequency requirements of the kilohertz band.
Major Features:
▪ Optimized GTO switching performance enables operation without dv/dt snubber circuitry under high current density conditions.
▪ By reducing the thickness of silicon chips, the conduction and turn-off losses of devices can be effectively reduced.
▪ Simplify gate drive requirements and significantly reduce drive power consumption in the on-state of the device.
▪ Develop compatible anti-parallel diodes to support unbuffered turn-off operation under high di/dt conditions.
▪ It can stably achieve high-frequency operation under both steady-state and dynamic operating conditions.
▪ Integrating the GTO thyristor main switch and freewheeling diode into a single semiconductor package achieves integrated device design.
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