5SHY3545L0009 3BHB013085R000 is desinged as ABB IGCT MODULE. The Integrated Gate-Commutated Thyristor (IGCT) was introduced about 15 years ago and has established itself as a preferred solution for a number of high power electronics applications. These applications have in common that the rated power level is in the megawatts (MW) and they range from industrial drives and track-side supplies to power quality and high-current breakers. In this article we highlight the features making the IGCT so attractive for high power applications and we discuss the developments that will further strengthen the IGCT’s advantages in high power applications.

Due to 5SHY3545L0009 on-state operation in thyristor mode, the IGCT has inherently lower conduction losses than a comparable IGBT device. The buffer layer, which can be used with the IGCT as well as with the IGBT, is the common denominator that causes these two devices to have comparable switching losses (ignoring the higher turn-on losses of the IGBT, which implements gate-controlled di/dt for the diode recovery protection). The improved loss characteristics and snubberless operation allow cost-effective IGCT applications with switching frequencies in the range of 500 Hz to 2kHz.